英语翻译QCLs based on polar semiconductors such as GaAs/AlGaAs and AlInAs/GaInAs are not capable of emitting in the energy range around the longitudinal optical (LO) phonon energies (ELO=36meV in GaAs and ELO=34 meV in InGaAs),leaving a gap in th

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英语翻译QCLs based on polar semiconductors such as GaAs/AlGaAs and AlInAs/GaInAs are not capable of emitting in the energy range around the longitudinal optical (LO) phonon energies (ELO=36meV in GaAs and ELO=34 meV in InGaAs),leaving a gap in th
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英语翻译QCLs based on polar semiconductors such as GaAs/AlGaAs and AlInAs/GaInAs are not capable of emitting in the energy range around the longitudinal optical (LO) phonon energies (ELO=36meV in GaAs and ELO=34 meV in InGaAs),leaving a gap in th
英语翻译
QCLs based on polar semiconductors such as GaAs/AlGaAs and AlInAs/GaInAs are not capable of emitting in the energy range around the longitudinal optical (LO) phonon energies (ELO=36meV in GaAs and ELO=34 meV in InGaAs),leaving a gap in the spectral range between 30 and 40.怎么翻译啊?

英语翻译QCLs based on polar semiconductors such as GaAs/AlGaAs and AlInAs/GaInAs are not capable of emitting in the energy range around the longitudinal optical (LO) phonon energies (ELO=36meV in GaAs and ELO=34 meV in InGaAs),leaving a gap in th
就如GaAs / AlGaAs多极半导体和AlInAs基于QCLs / gainas屈服不是在能量范围内发射绕纵向光学(LO)声子的能量能够盘(ELO =在GaAs 36meV和Elo = 34 meV为砷化铟镓),留下一个缺口在30至40个光谱范围
额,比较难理解,因为很多专业术语,希望能帮到LZ啦.

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QCLs基于极地半导体材料等AlGaAs和AlInAs / GaInAs /是不太可能的发光在能源的范围内纵向光看哪)声子能量(ELO = 36meV在ELO = 34 meV和材料),将在InGaAs光谱覆盖范围的一个缺口介于30 ~ 40岁。